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Features
Very low fractional heating, less than11%
Very high slope efficiency
Broad absorption bands, about 8nm@940nm
No excited-state absorption or up-conversion
Conveniently pumped by reliable InGaAs diodes
at 940nm(or 970nm)
High thermal conductivity
Large mechanical strength
High optical quality
Specifications
Capabilities:
Nd dopant: 0.7 ~ 30 atm%
Diameter: 2 ~ 20mm
Length: 1 ~ 70mm

Specifications:
Orientation: <111>( ± 5° )
Dimensional Tolerance: +/-0.1mm
Wavefront Distortion: <λ/8 at 632.8nm
Surface Quality: 20/10
Parallelism: < 10 arc seconds
Perpendicularity: < 5 arc minutes
Surface Flatness: <λ/10 at 632.8nm
Clear Aperture: Central 95%
Chamfer: 0.15x45°
Coating: 1.HR@940nm R>99.8% + AR@1060nm R<0.2%
2.AR@940nm R<0.2% + HR@1060nm R>99.8%

Properties:
Chemical Formula Yb:Y3Al5O12
Crystal Structure Cubic
Lattice Constants 12.01Ä
Melting Point 1970℃
Density 4.56 g/cm3
Mohs Hardness 8.5
Thermal Expansion Coefficient 7.8x10-6 /K , [111], 0-250℃
Thermal Conductivity 14 W.s /m /K @ 20℃

Loss Coefficient 0.003 cm-1
Index of Refraction 1.82
Lasing Wavelength 1030 nm
Pump Wavelength 940 nm
Absorption band about pump wavelengt 10 nm