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- Very low fractional heating, less than11%
- Very high slope efficiency
- Broad absorption bands, about 8nm@940nm
- No excited-state absorption or up-conversion
- Conveniently pumped by reliable InGaAs diodes
- at 940nm(or 970nm)
- High thermal conductivity
- Large mechanical strength
- High optical quality
Capabilities:
| Nd dopant: | 0.7 ~ 30 atm% |
| Diameter: | 2 ~ 20mm |
| Length: | 1 ~ 70mm |
Specifications:
| Orientation: | <111>( ± 5° ) |
| Dimensional Tolerance: | +/-0.1mm |
| Wavefront Distortion: | <λ/8 at 632.8nm |
| Surface Quality: | 20/10 |
| Parallelism: | < 10 arc seconds |
| Perpendicularity: | < 5 arc minutes |
| Surface Flatness: | <λ/10 at 632.8nm |
| Clear Aperture: | Central 95% |
| Chamfer: | 0.15x45° |
| Coating: | 1.HR@940nm R>99.8% + AR@1060nm R<0.2% 2.AR@940nm R<0.2% + HR@1060nm R>99.8% |
Properties:
| Chemical Formula | Yb:Y3Al5O12 |
| Crystal Structure | Cubic |
| Lattice Constants | 12.01Ä |
| Melting Point | 1970℃ |
| Density | 4.56 g/cm3 |
| Mohs Hardness | 8.5 |
| Thermal Expansion Coefficient | 7.8x10-6 /K , [111], 0-250℃ |
| Thermal Conductivity | 14 W.s /m /K @ 20℃ |
| Loss Coefficient | 0.003 cm-1 |
| Index of Refraction | 1.82 |
| Lasing Wavelength | 1030 nm |
| Pump Wavelength | 940 nm |
| Absorption band about pump wavelengt | 10 nm |
